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IXTP10N60PM Datasheet

IXTP10N60PM Cover
DatasheetIXTP10N60PM
File Size54.26 KB
Total Pages2
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXTP10N60PM
Description MOSFET N-CH 600V 5A TO-220

IXTP10N60PM - IXYS

IXTP10N60PM Datasheet Page 1
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IXTP10N60PM IXTP10N60PM IXYS MOSFET N-CH 600V 5A TO-220 571

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URL Link

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

5A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

740mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1610pF @ 25V

FET Feature

-

Power Dissipation (Max)

50W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3