Top

IXTP05N100M Datasheet

IXTP05N100M Cover
DatasheetIXTP05N100M
File Size107.75 KB
Total Pages4
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXTP05N100M
Description MOSFET N-CH 1000V 700MA TO-220

IXTP05N100M - IXYS

IXTP05N100M Datasheet Page 1
IXTP05N100M Datasheet Page 2
IXTP05N100M Datasheet Page 3
IXTP05N100M Datasheet Page 4

The Products You May Be Interested In

IXTP05N100M IXTP05N100M IXYS MOSFET N-CH 1000V 700MA TO-220 195

More on Order

URL Link

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

700mA (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

17Ohm @ 375mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 25µA

Gate Charge (Qg) (Max) @ Vgs

7.8nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

260pF @ 25V

FET Feature

-

Power Dissipation (Max)

25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3