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IXTN22N100L Datasheet

IXTN22N100L Cover
DatasheetIXTN22N100L
File Size161.93 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXTN22N100L
Description MOSFET N-CH 1000V 22A SOT-227

IXTN22N100L - IXYS

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IXTN22N100L IXTN22N100L IXYS MOSFET N-CH 1000V 22A SOT-227 685

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URL Link

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

22A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

20V

Rds On (Max) @ Id, Vgs

600mOhm @ 11A, 20V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 15V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7050pF @ 25V

FET Feature

-

Power Dissipation (Max)

700W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC