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IXTI10N60P Datasheet

IXTI10N60P Cover
DatasheetIXTI10N60P
File Size241.26 KB
Total Pages4
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXTI10N60P
Description MOSFET N-CH 600V 10A I2-PAK

IXTI10N60P - IXYS

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IXTI10N60P IXTI10N60P IXYS MOSFET N-CH 600V 10A I2-PAK 217

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URL Link

IXTI10N60P

IXYS

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

740mOhm @ 5A, 10V

Vgs(th) (Max) @ Id

5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

32nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

1610pF @ 25V

FET Feature

-

Power Dissipation (Max)

200W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262 (I2PAK)

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA