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IXTH32P20T Datasheet

IXTH32P20T Cover
DatasheetIXTH32P20T
File Size241.02 KB
Total Pages7
ManufacturerIXYS
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts IXTH32P20T, IXTA32P20T, IXTP32P20T
Description MOSFET P-CH 200V 32A TO-247, MOSFET P-CH 200V 32A TO-263, MOSFET P-CH 200V 32A TO-220

IXTH32P20T - IXYS

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IXTA32P20T IXTA32P20T IXYS MOSFET P-CH 200V 32A TO-263 446

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IXTP32P20T IXTP32P20T IXYS MOSFET P-CH 200V 32A TO-220 351

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URL Link

IXTH32P20T

IXYS

Manufacturer

IXYS

Series

TrenchP™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

185nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

14500pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXTH)

Package / Case

TO-247-3

IXTA32P20T

IXYS

Manufacturer

IXYS

Series

TrenchP™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

185nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

14500pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXTP32P20T

IXYS

Manufacturer

IXYS

Series

TrenchP™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

32A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

130mOhm @ 16A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

185nC @ 10V

Vgs (Max)

±15V

Input Capacitance (Ciss) (Max) @ Vds

14500pF @ 25V

FET Feature

-

Power Dissipation (Max)

300W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3