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IXTC160N10T Datasheet

IXTC160N10T Cover
DatasheetIXTC160N10T
File Size187.7 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXTC160N10T
Description MOSFET N-CH 100V 83A ISOPLUS220

IXTC160N10T - IXYS

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IXTC160N10T IXTC160N10T IXYS MOSFET N-CH 100V 83A ISOPLUS220 184

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URL Link

Manufacturer

IXYS

Series

TrenchMV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

83A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

132nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6600pF @ 25V

FET Feature

-

Power Dissipation (Max)

140W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS220™

Package / Case

ISOPLUS220™