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IXTA80N10T7 Datasheet

IXTA80N10T7 Cover
DatasheetIXTA80N10T7
File Size163.42 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXTA80N10T7
Description MOSFET N-CH 100V 80A TO-263-7

IXTA80N10T7 - IXYS

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IXTA80N10T7 IXTA80N10T7 IXYS MOSFET N-CH 100V 80A TO-263-7 269

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URL Link

Manufacturer

IXYS

Series

TrenchMV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

80A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

14mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

4.5V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3040pF @ 25V

FET Feature

-

Power Dissipation (Max)

230W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263-7 (IXTA..7)

Package / Case

TO-263-7, D²Pak (6 Leads + Tab), TO-263CB