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IXTA48N20T Datasheet

IXTA48N20T Cover
DatasheetIXTA48N20T
File Size185.28 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IXTA48N20T, IXTP48N20T
Description MOSFET N-CH 200V 48A TO-263, MOSFET N-CH 200V 48A TO-220

IXTA48N20T - IXYS

IXTA48N20T Datasheet Page 1
IXTA48N20T Datasheet Page 2
IXTA48N20T Datasheet Page 3
IXTA48N20T Datasheet Page 4
IXTA48N20T Datasheet Page 5

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URL Link

IXTA48N20T

IXYS

Manufacturer

IXYS

Series

Trench™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

50mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3090pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263 (IXTA)

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IXTP48N20T

IXYS

Manufacturer

IXYS

Series

TrenchMV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

50mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

60nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3000pF @ 25V

FET Feature

-

Power Dissipation (Max)

250W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3