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IXTA1N170DHV Datasheet

IXTA1N170DHV Cover
DatasheetIXTA1N170DHV
File Size233.51 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IXTA1N170DHV, IXTH1N170DHV
Description MOSFET N-CH 1700V 1A TO-263, MOSFET N-CH

IXTA1N170DHV - IXYS

IXTA1N170DHV Datasheet Page 1
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URL Link

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1700V

Current - Continuous Drain (Id) @ 25°C

1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

16Ohm @ 500mA, 0V

Vgs(th) (Max) @ Id

-

Gate Charge (Qg) (Max) @ Vgs

47nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3090pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

290W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-263

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Manufacturer

IXYS

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1700V

Current - Continuous Drain (Id) @ 25°C

1A (Tj)

Drive Voltage (Max Rds On, Min Rds On)

0V

Rds On (Max) @ Id, Vgs

16Ohm @ 500mA, 0V

Vgs(th) (Max) @ Id

4.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

47nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

3090pF @ 25V

FET Feature

Depletion Mode

Power Dissipation (Max)

290W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247HV

Package / Case

TO-247-3 Variant