Top

IXFX26N60Q Datasheet

IXFX26N60Q Cover
DatasheetIXFX26N60Q
File Size104.74 KB
Total Pages2
ManufacturerIXYS
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IXFX26N60Q, IXFK26N60Q
Description MOSFET N-CH 600V 26A PLUS 247, MOSFET N-CH 600V 26A TO-264

IXFX26N60Q - IXYS

IXFX26N60Q Datasheet Page 1
IXFX26N60Q Datasheet Page 2

The Products You May Be Interested In

IXFX26N60Q IXFX26N60Q IXYS MOSFET N-CH 600V 26A PLUS 247 218

More on Order

IXFK26N60Q IXFK26N60Q IXYS MOSFET N-CH 600V 26A TO-264 392

More on Order

URL Link

IXFX26N60Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

250mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5100pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3

IXFK26N60Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

26A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

250mOhm @ 13A, 10V

Vgs(th) (Max) @ Id

4.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

200nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5100pF @ 25V

FET Feature

-

Power Dissipation (Max)

360W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264AA (IXFK)

Package / Case

TO-264-3, TO-264AA