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IXFT60N50P3 Datasheet

IXFT60N50P3 Cover
DatasheetIXFT60N50P3
File Size176.29 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 3 part numbers
Associated Parts IXFT60N50P3, IXFQ60N50P3, IXFH60N50P3
Description MOSFET N-CH 500V 60A TO268, MOSFET N-CH 500V 60A TO3P, MOSFET N-CH 500V 60A TO247

IXFT60N50P3 - IXYS

IXFT60N50P3 Datasheet Page 1
IXFT60N50P3 Datasheet Page 2
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IXFT60N50P3 Datasheet Page 4
IXFT60N50P3 Datasheet Page 5

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IXFQ60N50P3 IXFQ60N50P3 IXYS MOSFET N-CH 500V 60A TO3P 356

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IXFH60N50P3 IXFH60N50P3 IXYS MOSFET N-CH 500V 60A TO247 3141

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URL Link

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

96nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6250pF @ 25V

FET Feature

-

Power Dissipation (Max)

1040W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

96nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6250pF @ 25V

FET Feature

-

Power Dissipation (Max)

1040W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-3P

Package / Case

TO-3P-3, SC-65-3

Manufacturer

IXYS

Series

HiPerFET™, Polar3™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

100mOhm @ 30A, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

96nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

6250pF @ 25V

FET Feature

-

Power Dissipation (Max)

1040W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3