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IXFR48N50Q Datasheet

IXFR48N50Q Cover
DatasheetIXFR48N50Q
File Size534.54 KB
Total Pages4
ManufacturerIXYS
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IXFR48N50Q, IXFR44N50Q
Description MOSFET N-CH 500V 40A ISOPLUS247, MOSFET N-CH 500V 34A ISOPLUS247

IXFR48N50Q - IXYS

IXFR48N50Q Datasheet Page 1
IXFR48N50Q Datasheet Page 2
IXFR48N50Q Datasheet Page 3
IXFR48N50Q Datasheet Page 4

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IXFR44N50Q IXFR44N50Q IXYS MOSFET N-CH 500V 34A ISOPLUS247 306

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URL Link

IXFR48N50Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

110mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7000pF @ 25V

FET Feature

-

Power Dissipation (Max)

310W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™

IXFR44N50Q

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

34A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

120mOhm @ 22A, 10V

Vgs(th) (Max) @ Id

4V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

190nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7000pF @ 25V

FET Feature

-

Power Dissipation (Max)

310W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

ISOPLUS247™

Package / Case

ISOPLUS247™