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IXFP3N50PM Datasheet

IXFP3N50PM Cover
DatasheetIXFP3N50PM
File Size650.93 KB
Total Pages2
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFP3N50PM
Description MOSFET N-CH 500V 2.7A TO-220

IXFP3N50PM - IXYS

IXFP3N50PM Datasheet Page 1
IXFP3N50PM Datasheet Page 2

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IXFP3N50PM IXFP3N50PM IXYS MOSFET N-CH 500V 2.7A TO-220 360

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URL Link

IXFP3N50PM

IXYS

Manufacturer

IXYS

Series

HiPerFET™, PolarHT™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

500V

Current - Continuous Drain (Id) @ 25°C

2.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

2Ohm @ 1.8A, 10V

Vgs(th) (Max) @ Id

5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.3nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

409pF @ 25V

FET Feature

-

Power Dissipation (Max)

36W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3