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IXFN36N100 Datasheet

IXFN36N100 Cover
DatasheetIXFN36N100
File Size132.91 KB
Total Pages4
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFN36N100
Description MOSFET N-CH 1KV 36A SOT-227B

IXFN36N100 - IXYS

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URL Link

IXFN36N100

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

36A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

240mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

380nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

9200pF @ 25V

FET Feature

-

Power Dissipation (Max)

700W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC