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| Datasheet | IXFN320N17T2 |
| File Size | 178.53 KB |
| Total Pages | 6 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFN320N17T2 |
| Description | MOSFET N-CH 170V 260A SOT227 |
IXFN320N17T2 - IXYS
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URL Link
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Manufacturer IXYS Series GigaMOS™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 170V Current - Continuous Drain (Id) @ 25°C 260A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 5.2mOhm @ 60A, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 640nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 45000pF @ 25V FET Feature - Power Dissipation (Max) 1070W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |