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IXFN230N20T Datasheet

IXFN230N20T Cover
DatasheetIXFN230N20T
File Size117.58 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFN230N20T
Description MOSFET N-CH 200V 220A SOT-227

IXFN230N20T - IXYS

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IXFN230N20T IXFN230N20T IXYS MOSFET N-CH 200V 220A SOT-227 616

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URL Link

Manufacturer

IXYS

Series

GigaMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

220A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

7.5mOhm @ 60A, 10V

Vgs(th) (Max) @ Id

5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

378nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

28000pF @ 25V

FET Feature

-

Power Dissipation (Max)

1090W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC