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IXFN180N20 Datasheet

IXFN180N20 Cover
DatasheetIXFN180N20
File Size85.69 KB
Total Pages2
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFN180N20
Description MOSFET N-CH 200V 180A SOT-227B

IXFN180N20 - IXYS

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IXFN180N20 Datasheet Page 2

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URL Link

IXFN180N20

IXYS

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

180A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

10mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

660nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

22000pF @ 25V

FET Feature

-

Power Dissipation (Max)

700W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC