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IXFN120N65X2 Datasheet

IXFN120N65X2 Cover
DatasheetIXFN120N65X2
File Size130.27 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFN120N65X2
Description MOSFET N-CH 650V 108A SOT-227

IXFN120N65X2 - IXYS

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IXFN120N65X2 IXFN120N65X2 IXYS MOSFET N-CH 650V 108A SOT-227 418

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URL Link

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

650V

Current - Continuous Drain (Id) @ 25°C

108A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

24mOhm @ 54A, 10V

Vgs(th) (Max) @ Id

5.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

225nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

15500pF @ 25V

FET Feature

-

Power Dissipation (Max)

890W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC