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IXFN102N30P Datasheet

IXFN102N30P Cover
DatasheetIXFN102N30P
File Size116.66 KB
Total Pages2
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFN102N30P
Description MOSFET N-CH 300V 88A SOT227B

IXFN102N30P - IXYS

IXFN102N30P Datasheet Page 1
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IXFN102N30P IXFN102N30P IXYS MOSFET N-CH 300V 88A SOT227B 404

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URL Link

Manufacturer

IXYS

Series

PolarHV™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

300V

Current - Continuous Drain (Id) @ 25°C

88A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

33mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

224nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

7500pF @ 25V

FET Feature

-

Power Dissipation (Max)

600W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Chassis Mount

Supplier Device Package

SOT-227B

Package / Case

SOT-227-4, miniBLOC