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IXFK48N60Q3 Datasheet

IXFK48N60Q3 Cover
DatasheetIXFK48N60Q3
File Size127.13 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IXFK48N60Q3, IXFX48N60Q3
Description MOSFET N-CH 600V 48A TO-264, MOSFET N-CH 600V 48A PLUS247

IXFK48N60Q3 - IXYS

IXFK48N60Q3 Datasheet Page 1
IXFK48N60Q3 Datasheet Page 2
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IXFK48N60Q3 Datasheet Page 5

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URL Link

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

140mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

6.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7020pF @ 25V

FET Feature

-

Power Dissipation (Max)

1000W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-264AA (IXFK)

Package / Case

TO-264-3, TO-264AA

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

140mOhm @ 24A, 10V

Vgs(th) (Max) @ Id

6.5V @ 4mA

Gate Charge (Qg) (Max) @ Vgs

140nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

7020pF @ 25V

FET Feature

-

Power Dissipation (Max)

1000W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS247™-3

Package / Case

TO-247-3