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IXFH6N100F Datasheet

IXFH6N100F Cover
DatasheetIXFH6N100F
File Size107.43 KB
Total Pages2
ManufacturerIXYS-RF
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IXFH6N100F, IXFT6N100F
Description MOSFET N-CH 1000V 6A TO247, MOSFET N-CH 1000V 6A TO268

IXFH6N100F - IXYS-RF

IXFH6N100F Datasheet Page 1
IXFH6N100F Datasheet Page 2

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URL Link

IXFH6N100F

IXYS-RF

Manufacturer

IXYS-RF

Series

HiPerRF™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.9Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

5.5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1770pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247 (IXFH)

Package / Case

TO-247-3

IXFT6N100F

IXYS-RF

Manufacturer

IXYS-RF

Series

HiPerRF™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

6A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.9Ohm @ 3A, 10V

Vgs(th) (Max) @ Id

5.5V @ 2.5mA

Gate Charge (Qg) (Max) @ Vgs

54nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1770pF @ 25V

FET Feature

-

Power Dissipation (Max)

180W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

TO-268 (IXFT)

Package / Case

TO-268-3, D³Pak (2 Leads + Tab), TO-268AA