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IXFH230N10T Datasheet

IXFH230N10T Cover
DatasheetIXFH230N10T
File Size165.49 KB
Total Pages6
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFH230N10T
Description MOSFET N-CH 100V 230A TO-247

IXFH230N10T - IXYS

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IXFH230N10T IXFH230N10T IXYS MOSFET N-CH 100V 230A TO-247 265

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URL Link

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

230A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

4.7mOhm @ 500mA, 10V

Vgs(th) (Max) @ Id

4.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

250nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15300pF @ 25V

FET Feature

-

Power Dissipation (Max)

650W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3