Top

IXFH10N100P Datasheet

IXFH10N100P Cover
DatasheetIXFH10N100P
File Size178.1 KB
Total Pages4
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFH10N100P
Description MOSFET N-CH 1KV 10A TO-247AD

IXFH10N100P - IXYS

IXFH10N100P Datasheet Page 1
IXFH10N100P Datasheet Page 2
IXFH10N100P Datasheet Page 3
IXFH10N100P Datasheet Page 4

The Products You May Be Interested In

IXFH10N100P IXFH10N100P IXYS MOSFET N-CH 1KV 10A TO-247AD 345

More on Order

URL Link

Manufacturer

IXYS

Series

HiPerFET™, PolarP2™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

1000V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

1.4Ohm @ 5A, 10V

Vgs(th) (Max) @ Id

6.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

56nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

3030pF @ 25V

FET Feature

-

Power Dissipation (Max)

380W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-247AD (IXFH)

Package / Case

TO-247-3