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| Datasheet | IXFE36N100 |
| File Size | 340.74 KB |
| Total Pages | 2 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IXFE36N100, IXFE34N100 |
| Description | MOSFET N-CH 1000V 33A ISOPLUS227, MOSFET N-CH 1000V 30A ISOPLUS227 |
IXFE36N100 - IXYS
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IXFE36N100 | IXYS | MOSFET N-CH 1000V 33A ISOPLUS227 | 309 More on Order |
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IXFE34N100 | IXYS | MOSFET N-CH 1000V 30A ISOPLUS227 | 385 More on Order |
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Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 33A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 240mOhm @ 18A, 10V Vgs(th) (Max) @ Id 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 455nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 25V FET Feature - Power Dissipation (Max) 580W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |
Manufacturer IXYS Series HiPerFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 1000V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 280mOhm @ 17A, 10V Vgs(th) (Max) @ Id 5.5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 455nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 25V FET Feature - Power Dissipation (Max) 580W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Chassis Mount Supplier Device Package SOT-227B Package / Case SOT-227-4, miniBLOC |