Semiconductors
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| Datasheet | IXFC20N80P |
| File Size | 133.87 KB |
| Total Pages | 4 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | IXFC20N80P, IXFR20N80P |
| Description | MOSFET N-CH 800V 11A ISOPLUS220, MOSFET N-CH 800V 11A ISOPLUS247 |
IXFC20N80P - IXYS
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IXFC20N80P | IXYS | MOSFET N-CH 800V 11A ISOPLUS220 | 562 More on Order |
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IXFR20N80P | IXYS | MOSFET N-CH 800V 11A ISOPLUS247 | 446 More on Order |
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Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 500mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4680pF @ 25V FET Feature - Power Dissipation (Max) 166W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS220™ Package / Case ISOPLUS220™ |
Manufacturer IXYS Series HiPerFET™, PolarHT™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 500mOhm @ 10A, 10V Vgs(th) (Max) @ Id 5V @ 4mA Gate Charge (Qg) (Max) @ Vgs 85nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 4680pF @ 25V FET Feature - Power Dissipation (Max) 166W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package ISOPLUS247™ Package / Case ISOPLUS247™ |