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IXFB62N80Q3 Datasheet

IXFB62N80Q3 Cover
DatasheetIXFB62N80Q3
File Size144.06 KB
Total Pages5
ManufacturerIXYS
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IXFB62N80Q3
Description MOSFET N-CH 800V 62A PLUS264

IXFB62N80Q3 - IXYS

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IXFB62N80Q3 IXFB62N80Q3 IXYS MOSFET N-CH 800V 62A PLUS264 465

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URL Link

Manufacturer

IXYS

Series

HiPerFET™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

62A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

140mOhm @ 31A, 10V

Vgs(th) (Max) @ Id

6.5V @ 8mA

Gate Charge (Qg) (Max) @ Vgs

270nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

13600pF @ 25V

FET Feature

-

Power Dissipation (Max)

1560W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PLUS264™

Package / Case

TO-264-3, TO-264AA