Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | IXFB170N30P |
| File Size | 126.56 KB |
| Total Pages | 5 |
| Manufacturer | IXYS |
| Website | |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IXFB170N30P |
| Description | MOSFET N-CH TO-264 |
IXFB170N30P - IXYS
The Products You May Be Interested In
 |
IXFB170N30P | IXYS | MOSFET N-CH TO-264 | 323 More on Order |
URL Link
www.zouser.com/datasheet/IXFB170N30P
|
Manufacturer IXYS Series HiPerFET™, PolarP2™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 300V Current - Continuous Drain (Id) @ 25°C 170A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 18mOhm @ 85A, 10V Vgs(th) (Max) @ Id 4.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 258nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 20000pF @ 25V FET Feature - Power Dissipation (Max) 1250W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PLUS264™ Package / Case TO-264-3, TO-264AA |