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ISL9R860S3ST Datasheet

ISL9R860S3ST Cover
DatasheetISL9R860S3ST
File Size956.91 KB
Total Pages10
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts ISL9R860S3ST, ISL9R860P2
Description DIODE GEN PURP 600V 8A TO263-2, DIODE GEN PURP 600V 8A TO220AC

ISL9R860S3ST - ON Semiconductor

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ISL9R860S3ST ISL9R860S3ST ON Semiconductor DIODE GEN PURP 600V 8A TO263-2 1619

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ISL9R860P2 ISL9R860P2 ON Semiconductor DIODE GEN PURP 600V 8A TO220AC 2420

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ISL9R860S3ST

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Stealth™

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

2.4V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

100µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Surface Mount

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Supplier Device Package

TO-263AB (D²PAK)

Operating Temperature - Junction

-55°C ~ 175°C

ISL9R860P2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Stealth™

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

8A

Voltage - Forward (Vf) (Max) @ If

2.4V @ 8A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

30ns

Current - Reverse Leakage @ Vr

100µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220-2

Operating Temperature - Junction

-55°C ~ 175°C