Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | ISL9R460S3ST |
| File Size | 142.37 KB |
| Total Pages | 6 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 2 part numbers |
| Associated Parts | ISL9R460S3ST, ISL9R460P2 |
| Description | DIODE GEN PURP 600V 4A TO263AB, DIODE GEN PURP 600V 4A TO220AC |
ISL9R460S3ST - ON Semiconductor
The Products You May Be Interested In
 |
ISL9R460S3ST | ON Semiconductor | DIODE GEN PURP 600V 4A TO263AB | 392 More on Order |
 |
ISL9R460P2 | ON Semiconductor | DIODE GEN PURP 600V 4A TO220AC | 303 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series Stealth™ Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 4A Voltage - Forward (Vf) (Max) @ If 2.4V @ 4A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 22ns Current - Reverse Leakage @ Vr 100µA @ 600V Capacitance @ Vr, F - Mounting Type Surface Mount Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Supplier Device Package TO-263AB Operating Temperature - Junction -55°C ~ 175°C |
Manufacturer ON Semiconductor Series Stealth™ Diode Type Standard Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 4A Voltage - Forward (Vf) (Max) @ If 2.4V @ 4A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 22ns Current - Reverse Leakage @ Vr 100µA @ 600V Capacitance @ Vr, F - Mounting Type Through Hole Package / Case TO-220-2 Supplier Device Package TO-220-2 Operating Temperature - Junction -55°C ~ 175°C |