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ISL9R3060G2 Datasheet

ISL9R3060G2 Cover
DatasheetISL9R3060G2
File Size436.54 KB
Total Pages9
ManufacturerON Semiconductor
Websitehttp://www.onsemi.com/
Total PartsThis datasheet covers 2 part numbers
Associated Parts ISL9R3060G2, ISL9R3060P2
Description DIODE GEN PURP 600V 30A TO247, DIODE GEN PURP 600V 30A TO220AC

ISL9R3060G2 - ON Semiconductor

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ISL9R3060G2 ISL9R3060G2 ON Semiconductor DIODE GEN PURP 600V 30A TO247 1640

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ISL9R3060P2 ISL9R3060P2 ON Semiconductor DIODE GEN PURP 600V 30A TO220AC 3930

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URL Link

ISL9R3060G2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Stealth™

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

2.4V @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

45ns

Current - Reverse Leakage @ Vr

100µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-247-2

Supplier Device Package

TO-247-2

Operating Temperature - Junction

-55°C ~ 175°C

ISL9R3060P2

ON Semiconductor

Manufacturer

ON Semiconductor

Series

Stealth™

Diode Type

Standard

Voltage - DC Reverse (Vr) (Max)

600V

Current - Average Rectified (Io)

30A

Voltage - Forward (Vf) (Max) @ If

2.4V @ 30A

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

45ns

Current - Reverse Leakage @ Vr

100µA @ 600V

Capacitance @ Vr, F

-

Mounting Type

Through Hole

Package / Case

TO-220-2

Supplier Device Package

TO-220-2

Operating Temperature - Junction

-55°C ~ 175°C