Semiconductors
Passive Components
Sensors
Power
Optoelectronics
| Datasheet | ISL9N303AS3 |
| File Size | 269.83 KB |
| Total Pages | 11 |
| Manufacturer | ON Semiconductor |
| Website | http://www.onsemi.com/ |
| Total Parts | This datasheet covers 3 part numbers |
| Associated Parts | ISL9N303AS3, ISL9N303AS3ST, ISL9N303AP3 |
| Description | MOSFET N-CH 30V 75A TO-262AA, MOSFET N-CH 30V 75A D2PAK, MOSFET N-CH 30V 75A TO-220AB |
ISL9N303AS3 - ON Semiconductor
The Products You May Be Interested In
 |
ISL9N303AS3 | ON Semiconductor | MOSFET N-CH 30V 75A TO-262AA | 460 More on Order |
 |
ISL9N303AS3ST | ON Semiconductor | MOSFET N-CH 30V 75A D2PAK | 525 More on Order |
 |
ISL9N303AP3 | ON Semiconductor | MOSFET N-CH 30V 75A TO-220AB | 475 More on Order |
URL Link
|
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.2mOhm @ 75A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 172nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 15V FET Feature - Power Dissipation (Max) 215W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package I2PAK (TO-262) Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA |
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.2mOhm @ 75A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 172nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 15V FET Feature - Power Dissipation (Max) 215W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package D²PAK (TO-263AB) Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Manufacturer ON Semiconductor Series UltraFET™ FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.2mOhm @ 75A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 172nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 7000pF @ 15V FET Feature - Power Dissipation (Max) 215W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220-3 Package / Case TO-220-3 |