Top

IRLZ24NSTRR Datasheet

IRLZ24NSTRR Cover
DatasheetIRLZ24NSTRR
File Size197.23 KB
Total Pages11
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 4 part numbers
Associated Parts IRLZ24NSTRR, IRLZ24NSTRL, IRLZ24NL, IRLZ24NS
Description MOSFET N-CH 55V 18A D2PAK, MOSFET N-CH 55V 18A D2PAK, MOSFET N-CH 55V 18A TO-262, MOSFET N-CH 55V 18A D2PAK

IRLZ24NSTRR - Infineon Technologies

IRLZ24NSTRR Datasheet Page 1
IRLZ24NSTRR Datasheet Page 2
IRLZ24NSTRR Datasheet Page 3
IRLZ24NSTRR Datasheet Page 4
IRLZ24NSTRR Datasheet Page 5
IRLZ24NSTRR Datasheet Page 6
IRLZ24NSTRR Datasheet Page 7
IRLZ24NSTRR Datasheet Page 8
IRLZ24NSTRR Datasheet Page 9
IRLZ24NSTRR Datasheet Page 10
IRLZ24NSTRR Datasheet Page 11

The Products You May Be Interested In

IRLZ24NSTRR IRLZ24NSTRR Infineon Technologies MOSFET N-CH 55V 18A D2PAK 501

More on Order

IRLZ24NSTRL IRLZ24NSTRL Infineon Technologies MOSFET N-CH 55V 18A D2PAK 186

More on Order

IRLZ24NL IRLZ24NL Infineon Technologies MOSFET N-CH 55V 18A TO-262 347

More on Order

IRLZ24NS IRLZ24NS Infineon Technologies MOSFET N-CH 55V 18A D2PAK 370

More on Order

URL Link

IRLZ24NSTRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

60mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

480pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRLZ24NSTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

60mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

480pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRLZ24NL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

60mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

480pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRLZ24NS

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

55V

Current - Continuous Drain (Id) @ 25°C

18A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

60mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 5V

Vgs (Max)

±16V

Input Capacitance (Ciss) (Max) @ Vds

480pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 45W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB