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IRLR8103TR Datasheet

IRLR8103TR Cover
DatasheetIRLR8103TR
File Size38.75 KB
Total Pages4
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts IRLR8103TR, IRLR8103
Description MOSFET N-CH 30V 89A DPAK, MOSFET N-CH 30V 89A D-PAK

IRLR8103TR - Infineon Technologies

IRLR8103TR Datasheet Page 1
IRLR8103TR Datasheet Page 2
IRLR8103TR Datasheet Page 3
IRLR8103TR Datasheet Page 4

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URL Link

IRLR8103TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

89A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

50nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

89W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63

IRLR8103

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

89A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

7mOhm @ 15A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA (Min)

Gate Charge (Qg) (Max) @ Vgs

50nC @ 5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

-

FET Feature

-

Power Dissipation (Max)

89W (Ta)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

D-Pak

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63