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IRLMS6702TR Datasheet

IRLMS6702TR Cover
DatasheetIRLMS6702TR
File Size199.16 KB
Total Pages8
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IRLMS6702TR
Description MOSFET P-CH 20V 2.4A 6-TSOP

IRLMS6702TR - Infineon Technologies

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IRLMS6702TR IRLMS6702TR Infineon Technologies MOSFET P-CH 20V 2.4A 6-TSOP 570

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URL Link

IRLMS6702TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.4A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.7V, 4.5V

Rds On (Max) @ Id, Vgs

200mOhm @ 1.6A, 4.5V

Vgs(th) (Max) @ Id

700mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

8.8nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

210pF @ 15V

FET Feature

-

Power Dissipation (Max)

1.7W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro6™(SOT23-6)

Package / Case

SOT-23-6