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IRLML6401TR Datasheet

IRLML6401TR Cover
DatasheetIRLML6401TR
File Size142.08 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IRLML6401TR
Description MOSFET P-CH 12V 4.3A SOT-23

IRLML6401TR - Infineon Technologies

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IRLML6401TR IRLML6401TR Infineon Technologies MOSFET P-CH 12V 4.3A SOT-23 527

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URL Link

IRLML6401TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

4.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Rds On (Max) @ Id, Vgs

50mOhm @ 4.3A, 4.5V

Vgs(th) (Max) @ Id

950mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs

15nC @ 5V

Vgs (Max)

±8V

Input Capacitance (Ciss) (Max) @ Vds

830pF @ 10V

FET Feature

-

Power Dissipation (Max)

1.3W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro3™/SOT-23

Package / Case

TO-236-3, SC-59, SOT-23-3