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IRG7CH37K10EF Datasheet

IRG7CH37K10EF Cover
DatasheetIRG7CH37K10EF
File Size141.16 KB
Total Pages4
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IRG7CH37K10EF
Description IGBT CHIP WAFER

IRG7CH37K10EF - Infineon Technologies

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URL Link

IRG7CH37K10EF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

-

IGBT Type

-

Voltage - Collector Emitter Breakdown (Max)

1200V

Current - Collector (Ic) (Max)

15A

Current - Collector Pulsed (Icm)

-

Vce(on) (Max) @ Vge, Ic

2.3V @ 15V, 15A

Power - Max

-

Switching Energy

-

Input Type

Standard

Gate Charge

80nC

Td (on/off) @ 25°C

28ns/122ns

Test Condition

600V, 15A, 10Ohm, 15V

Reverse Recovery Time (trr)

-

Operating Temperature

-40°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Package / Case

Die

Supplier Device Package

Die