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IRFR220 Datasheet

IRFR220,118 Cover
DatasheetIRFR220,118
File Size266.83 KB
Total Pages12
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IRFR220,118
Description MOSFET N-CH 200V 4.8A DPAK

IRFR220,118 - NXP

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IRFR220,118 IRFR220,118 NXP MOSFET N-CH 200V 4.8A DPAK 403

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

4.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

800mOhm @ 2.9A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

14nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

280pF @ 25V

FET Feature

-

Power Dissipation (Max)

42W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DPAK

Package / Case

TO-252-3, DPak (2 Leads + Tab), SC-63