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IRFB17N60KPBF Datasheet

IRFB17N60KPBF Cover
DatasheetIRFB17N60KPBF
File Size1,018.17 KB
Total Pages8
ManufacturerVishay Siliconix
Website
Total PartsThis datasheet covers 2 part numbers
Associated Parts IRFB17N60KPBF, IRFB17N60K
Description MOSFET N-CH 600V 17A TO-220AB, MOSFET N-CH 600V 17A TO-220AB

IRFB17N60KPBF - Vishay Siliconix

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URL Link

IRFB17N60KPBF

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

420mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

99nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 25V

FET Feature

-

Power Dissipation (Max)

340W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3

IRFB17N60K

Vishay Siliconix

Manufacturer

Vishay Siliconix

Series

-

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

600V

Current - Continuous Drain (Id) @ 25°C

17A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

420mOhm @ 10A, 10V

Vgs(th) (Max) @ Id

5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

99nC @ 10V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

2700pF @ 25V

FET Feature

-

Power Dissipation (Max)

340W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3