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IRF9520NSTRR Datasheet

IRF9520NSTRR Cover
DatasheetIRF9520NSTRR
File Size160.85 KB
Total Pages11
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 4 part numbers
Associated Parts IRF9520NSTRR, IRF9520NSTRL, IRF9520NL, IRF9520NS
Description MOSFET P-CH 100V 6.8A D2PAK, MOSFET P-CH 100V 6.8A D2PAK, MOSFET P-CH 100V 6.8A TO-262, MOSFET P-CH 100V 6.8A D2PAK

IRF9520NSTRR - Infineon Technologies

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URL Link

IRF9520NSTRR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

480mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 48W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF9520NSTRL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

480mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 48W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

IRF9520NL

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

480mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 48W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-262

Package / Case

TO-262-3 Long Leads, I²Pak, TO-262AA

IRF9520NS

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

6.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

480mOhm @ 4A, 10V

Vgs(th) (Max) @ Id

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

27nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

350pF @ 25V

FET Feature

-

Power Dissipation (Max)

3.8W (Ta), 48W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

D2PAK

Package / Case

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB