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IRF7526D1TR Datasheet

IRF7526D1TR Cover
DatasheetIRF7526D1TR
File Size120.95 KB
Total Pages8
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts IRF7526D1TR, IRF7526D1
Description MOSFET P-CH 30V 2A MICRO8, MOSFET P-CH 30V 2A MICRO8

IRF7526D1TR - Infineon Technologies

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URL Link

IRF7526D1TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

FETKY™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

200mOhm @ 1.2A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

180pF @ 25V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro8™

Package / Case

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

IRF7526D1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

FETKY™

FET Type

P-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

200mOhm @ 1.2A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

11nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

180pF @ 25V

FET Feature

Schottky Diode (Isolated)

Power Dissipation (Max)

1.25W (Ta)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

Micro8™

Package / Case

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)