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IRF7379QTRPBF Datasheet

IRF7379QTRPBF Cover
DatasheetIRF7379QTRPBF
File Size234.27 KB
Total Pages10
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IRF7379QTRPBF
Description MOSFET N/P-CH 30V 8-SOIC

IRF7379QTRPBF - Infineon Technologies

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URL Link

IRF7379QTRPBF

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5.8A, 4.3A

Rds On (Max) @ Id, Vgs

45mOhm @ 5.8A, 10V

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

25nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

520pF @ 25V

Power - Max

2.5W

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

8-SOIC (0.154", 3.90mm Width)

Supplier Device Package

8-SO