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| Datasheet | IRF7106 |
| File Size | 158.66 KB |
| Total Pages | 7 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IRF7106 |
| Description | MOSFET N/P-CH 20V 3A/2.5A 8-SOIC |
IRF7106 - Infineon Technologies
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IRF7106 | Infineon Technologies | MOSFET N/P-CH 20V 3A/2.5A 8-SOIC | 372 More on Order |
URL Link
www.zouser.com/datasheet/IRF7106
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Manufacturer Infineon Technologies Series HEXFET® FET Type N and P-Channel FET Feature Standard Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3A, 2.5A Rds On (Max) @ Id, Vgs 125mOhm @ 1A, 10V Vgs(th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 300pF @ 15V Power - Max 2W Operating Temperature - Mounting Type Surface Mount Package / Case 8-SOIC (0.154", 3.90mm Width) Supplier Device Package 8-SO |