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IRF6613TR1 Datasheet

IRF6613TR1 Cover
DatasheetIRF6613TR1
File Size232.96 KB
Total Pages8
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IRF6613TR1
Description MOSFET N-CH 40V 23A DIRECTFET

IRF6613TR1 - Infineon Technologies

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URL Link

IRF6613TR1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

23A (Ta), 150A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

3.4mOhm @ 23A, 10V

Vgs(th) (Max) @ Id

2.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

5950pF @ 15V

FET Feature

-

Power Dissipation (Max)

2.8W (Ta), 89W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MT

Package / Case

DirectFET™ Isometric MT