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IRF6607TR1 Datasheet

IRF6607TR1 Cover
DatasheetIRF6607TR1
File Size217.92 KB
Total Pages11
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts IRF6607TR1, IRF6607
Description MOSFET N-CH 30V 27A DIRECTFET, MOSFET N-CH 30V 27A DIRECTFET

IRF6607TR1 - Infineon Technologies

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URL Link

IRF6607TR1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

27A (Ta), 94A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 7V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

6930pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 42W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MT

Package / Case

DirectFET™ Isometric MT

IRF6607

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

27A (Ta), 94A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 7V

Rds On (Max) @ Id, Vgs

3.3mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

75nC @ 4.5V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

6930pF @ 15V

FET Feature

-

Power Dissipation (Max)

3.6W (Ta), 42W (Tc)

Operating Temperature

-40°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MT

Package / Case

DirectFET™ Isometric MT