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IRF6602 Datasheet

IRF6602 Cover
DatasheetIRF6602
File Size249.75 KB
Total Pages13
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IRF6602
Description MOSFET N-CH 20V 11A DIRECTFET

IRF6602 - Infineon Technologies

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IRF6602 IRF6602 Infineon Technologies MOSFET N-CH 20V 11A DIRECTFET 396

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URL Link

IRF6602

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

11A (Ta), 48A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

13mOhm @ 11A, 10V

Vgs(th) (Max) @ Id

2.3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

18nC @ 4.5V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1420pF @ 10V

FET Feature

-

Power Dissipation (Max)

2.3W (Ta), 42W (Tc)

Operating Temperature

-

Mounting Type

Surface Mount

Supplier Device Package

DIRECTFET™ MQ

Package / Case

DirectFET™ Isometric MQ