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IRF640 Datasheet

IRF640,127 Cover
DatasheetIRF640,127
File Size97.13 KB
Total Pages9
ManufacturerNXP
Website
Total PartsThis datasheet covers 1 part numbers
Associated Parts IRF640,127
Description MOSFET N-CH 200V 16A TO220AB

IRF640,127 - NXP

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IRF640,127 IRF640,127 NXP MOSFET N-CH 200V 16A TO220AB 304

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URL Link

Manufacturer

NXP USA Inc.

Series

TrenchMOS™

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

200V

Current - Continuous Drain (Id) @ 25°C

16A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

180mOhm @ 8A, 10V

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

63nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1850pF @ 25V

FET Feature

-

Power Dissipation (Max)

136W (Tc)

Operating Temperature

-55°C ~ 175°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

TO-220AB

Package / Case

TO-220-3