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IRF5851TR Datasheet

IRF5851TR Cover
DatasheetIRF5851TR
File Size575.89 KB
Total Pages14
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts IRF5851TR, IRF5851
Description MOSFET N/P-CH 20V 6-TSOP, MOSFET N/PCH 20V 2.7A/2.2A 6TSOP

IRF5851TR - Infineon Technologies

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URL Link

IRF5851TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.7A, 2.2A

Rds On (Max) @ Id, Vgs

90mOhm @ 2.7A, 4.5V

Vgs(th) (Max) @ Id

1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 15V

Power - Max

960mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP

IRF5851

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

N and P-Channel

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.7A, 2.2A

Rds On (Max) @ Id, Vgs

90mOhm @ 2.7A, 4.5V

Vgs(th) (Max) @ Id

1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

400pF @ 15V

Power - Max

960mW

Operating Temperature

-

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP