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| Datasheet | IRF5810TRPBF |
| File Size | 193.79 KB |
| Total Pages | 9 |
| Manufacturer | Infineon Technologies |
| Website | https://www.infineon.com |
| Total Parts | This datasheet covers 1 part numbers |
| Associated Parts | IRF5810TRPBF |
| Description | MOSFET 2P-CH 20V 2.9A 6-TSOP |
IRF5810TRPBF - Infineon Technologies
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URL Link
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Manufacturer Infineon Technologies Series HEXFET® FET Type 2 P-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 2.9A Rds On (Max) @ Id, Vgs 90mOhm @ 2.9A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds 650pF @ 16V Power - Max 960mW Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Package / Case SOT-23-6 Thin, TSOT-23-6 Supplier Device Package 6-TSOP |