Top

IRF5810TR Datasheet

IRF5810TR Cover
DatasheetIRF5810TR
File Size129.87 KB
Total Pages9
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 2 part numbers
Associated Parts IRF5810TR, IRF5810
Description MOSFET 2P-CH 20V 2.9A 6-TSOP, MOSFET 2P-CH 20V 2.9A 6TSOP

IRF5810TR - Infineon Technologies

IRF5810TR Datasheet Page 1
IRF5810TR Datasheet Page 2
IRF5810TR Datasheet Page 3
IRF5810TR Datasheet Page 4
IRF5810TR Datasheet Page 5
IRF5810TR Datasheet Page 6
IRF5810TR Datasheet Page 7
IRF5810TR Datasheet Page 8
IRF5810TR Datasheet Page 9

The Products You May Be Interested In

IRF5810TR IRF5810TR Infineon Technologies MOSFET 2P-CH 20V 2.9A 6-TSOP 486

More on Order

IRF5810 IRF5810 Infineon Technologies MOSFET 2P-CH 20V 2.9A 6TSOP 484

More on Order

URL Link

IRF5810TR

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.9A

Rds On (Max) @ Id, Vgs

90mOhm @ 2.9A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 16V

Power - Max

960mW

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP

IRF5810

Infineon Technologies

Manufacturer

Infineon Technologies

Series

HEXFET®

FET Type

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

2.9A

Rds On (Max) @ Id, Vgs

90mOhm @ 2.9A, 4.5V

Vgs(th) (Max) @ Id

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

9.6nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

650pF @ 16V

Power - Max

960mW

Operating Temperature

-

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

6-TSOP