Top

IPW80R360P7XKSA1 Datasheet

IPW80R360P7XKSA1 Cover
DatasheetIPW80R360P7XKSA1
File Size950.11 KB
Total Pages13
ManufacturerInfineon Technologies
Websitehttps://www.infineon.com
Total PartsThis datasheet covers 1 part numbers
Associated Parts IPW80R360P7XKSA1
Description MOSFET N-CH 800V 13A TO247-3

IPW80R360P7XKSA1 - Infineon Technologies

IPW80R360P7XKSA1 Datasheet Page 1
IPW80R360P7XKSA1 Datasheet Page 2
IPW80R360P7XKSA1 Datasheet Page 3
IPW80R360P7XKSA1 Datasheet Page 4
IPW80R360P7XKSA1 Datasheet Page 5
IPW80R360P7XKSA1 Datasheet Page 6
IPW80R360P7XKSA1 Datasheet Page 7
IPW80R360P7XKSA1 Datasheet Page 8
IPW80R360P7XKSA1 Datasheet Page 9
IPW80R360P7XKSA1 Datasheet Page 10
IPW80R360P7XKSA1 Datasheet Page 11
IPW80R360P7XKSA1 Datasheet Page 12
IPW80R360P7XKSA1 Datasheet Page 13

The Products You May Be Interested In

IPW80R360P7XKSA1 IPW80R360P7XKSA1 Infineon Technologies MOSFET N-CH 800V 13A TO247-3 858

More on Order

URL Link

IPW80R360P7XKSA1

Infineon Technologies

Manufacturer

Infineon Technologies

Series

CoolMOS™ P7

FET Type

N-Channel

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

800V

Current - Continuous Drain (Id) @ 25°C

13A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

360mOhm @ 5.6A, 10V

Vgs(th) (Max) @ Id

3.5V @ 280µA

Gate Charge (Qg) (Max) @ Vgs

30nC @ 10V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

930pF @ 500V

FET Feature

-

Power Dissipation (Max)

84W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Mounting Type

Through Hole

Supplier Device Package

PG-TO247-3-41

Package / Case

TO-247-3